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| Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 7, 10/2006 Gallium Arsenide CATV Integrated Amplifier Module Features * Specified for 79 - , 112 - and 132 - Channel Loading * Excellent Distortion Performance * Built - in Input Diode Protection * GaAs FET Transistor Technology * Unconditionally Stable Under All Load Conditions * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel. Applications * CATV Systems Operating in the 40 to 870 MHz Frequency Range * Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk Distribution Amplifiers for CATV Systems * Output Stage Amplifier on Applications Requiring Low Power Dissipation and High Output Performance * Driver Amplifier in Linear General Purpose Applications Description * 24 Vdc Supply or 12 Vdc Supply with Bias Change, 40 to 870 MHz, CATV Integrated Forward Amplifier Module MMG1001NT1 870 MHz 19 dB GAIN 132 - CHANNEL CATV INTEGRATED AMPLIFIER MODULE 16 1 CASE 978 - 03 PFP - 16 Table 1. Maximum Ratings Rating RF Voltage Input (Single Tone) DC Supply Voltage 24 V Application 12 V Application Operating Case Temperature Range Storage Temperature Range Symbol Vin VCC Value +65 +26 +14 - 20 to +100 - 40 to +100 C C Unit dBmV Vdc TC Tstg Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 6.6 Unit C/W Pin 3 Q1 Pin 4 RS1 Pin 5 RS2 Pin 6 Q2 Pin 7 Q3 Pin 15 N.C. N.C. RG3 Pin 13 VG1 VS1 VC VS2 VG2 N.C. 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 N.C. VD3 N.C. VGC N.C. VD4 N.C. N.C. RG4 Q4 Pin 11 (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 1. Functional Diagram Figure 2. Pin Connections (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MMG1001NT1 3-1 Freescale Semiconductor RF Linear Amplifiers Device Data Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (minimum) M1 (minimum) C5 (minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C Table 5. Electrical Characteristics for 24 V Application (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain Slope 50 MHz 870 MHz 40 - 870 MHz Symbol BW Gp S GF IRL f = 40 - 160 MHz f = 161 - 450 MHz f = 451 - 870 MHz ORL f = 40 - 400 MHz f = 401 - 870 MHz 132 - Channel FLAT 112 - Channel FLAT 79 - Channel FLAT 132 - Channel FLAT 112 - Channel FLAT 79 - Channel FLAT 132 - Channel FLAT 112 - Channel FLAT 79 - Channel FLAT 50 MHz 870 MHz CSO132 CSO112 CSO79 XMD132 XMD112 XMD79 CTB132 CTB112 CTB79 NF IDC -- -- -- -- -- -- -- -- -- -- -- -- -- 230 22 17 - 65 - 65 - 71 - 64 - 63 - 62 - 63 - 64 - 65 4 4 250 -- -- dBc - 58 - 59 - 62 dBc - 52 - 52 - 52 dBc - 56 - 56 - 58 5.0 5.0 265 dB mA (continued) -- -- 21 19 22 -- -- -- dB Min 40 -- -- -- -- Typ -- 18 19 0.6 0.5 Max 870 -- -- -- -- Unit MHz dB dB dB dB Gain Flatness (40 - 870 MHz, Peak to Valley) Input Return Loss (Zo = 75 Ohms) Output Return Loss (Zo = 75 Ohms) Composite Second Order (Vout = +44 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = +44 dBmV/ch., FM = 55 MHz) (Vout = +46 dBmV/ch., FM = 55 MHz) (Vout = +48 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = +44 dBmV/ch., Worst Case) (Vout = +46 dBmV/ch., Worst Case) (Vout = +48 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = - 20 to +100C) MMG1001NT1 3-2 Freescale Semiconductor RF Linear Amplifiers Device Data Table 5. Electrical Characteristics for 12 V Application (VCC = 12 Vdc, TC = +30C, 75 system unless otherwise noted) (continued) Characteristic Frequency Range Power Gain Slope 50 MHz 870 MHz 40 - 870 MHz Symbol BW Gp S GF IRL f = 40 - 160 MHz f = 161 - 450 MHz f = 451 - 870 MHz ORL f = 40 - 400 MHz f = 401 - 750 MHz f = 751 - 870 MHz 112 - Channel FLAT 79 - Channel FLAT 112 - Channel FLAT 79 - Channel FLAT 112 - Channel FLAT 79 - Channel FLAT 50 MHz 870 MHz CSO112 CSO79 XMD112 XMD79 CTB112 CTB79 NF IDC -- -- -- -- -- -- -- -- -- -- -- 190 19 17 15 - 65 - 71 - 63 - 62 - 64 - 65 4 4 210 -- -- -- dBc -- -- dBc -- -- dBc -- -- 5.0 5.0 225 dB mA -- -- 21 19 19 -- -- -- dB Min 40 -- -- -- -- Typ -- 18 19 0.6 0.5 Max 870 -- -- -- -- Unit MHz dB dB dB dB Gain Flatness (40 - 870 MHz, Peak to Valley) Input Return Loss (Zo = 75 Ohms) Output Return Loss (Zo = 75 Ohms) Composite Second Order (Vout = +42 dBmV/ch., Worst Case) (Vout = +42 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = +42 dBmV/ch., FM = 55 MHz) (Vout = +42 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = +42 dBmV/ch., Worst Case) (Vout = +42 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 12 V, TC = - 20 to +100C) MMG1001NT1 Freescale Semiconductor RF Linear Amplifiers Device Data 3-3 C10 C7 R9 C5 Pin 3 Pin 4 R18 Pin 5 Pin 6 R12 C6 C4 Pin 7 Pin 11 L2 Pin 13 R15 R16 VCC D3 R17 D2 C11 C9 T2 RF OUTPUT R13 Pin 15 L1 R11 C3 RF INPUT T1 C12 C1 R10 R1 R19 R2 D1 R3 R6 Q2 R4 C2 R5 Q1 R7 C8 R14 R8 Figure 3. MMG1001NT1 50 - 870 MHz Test Circuit Schematic Table 6. MMG1001NT1 50 - 870 MHz Test Circuit Component Designations and Values Designation C1, C7, C8, C11 C2, C3, C4, C9, C10 C5, C6 C12 D1 D2 D3 L1, L2 Q1, Q2 R1 R2 R3 R4 R5 R6 R7 R8 R9, R10, R15 R11, R12 R13, R14 R16 R17 R18 R19 T1 T2 PCB Description (24 V Application) 220 pF Chip Capacitors (0603) 0.01 mF Chip Capacitors (0603) 1.8 pF Chip Capacitors (0603) 5.6 pF Chip Capacitor (0603) 5.1 V Zener Diode, On/MM3Z5V1T1 27 V Zener Diode, On/MM3Z27VT1 Transient Voltage Suppressor, On/1.5k27A/1.5SMC27AT3 22 nH Chip Inductors (0603) Dual Transistors Package, On/MBT3904DW1T1 2.2 kW, 1/4 W Chip Resistor (1206) 560 W Chip Resistor (0603) 82 W Chip Resistor (0603) 820 W Chip Resistors (0603) 820 W Chip Resistors (0603) 120 W Chip Resistor (0603) 1.5 kW Chip Resistor (0603) 12 W, 1 W Chip Resistor (2512) 470 W Chip Resistors (0603) 18 W Chip Resistors (0603) 910 W Chip Resistors (0603) 2 kW Chip Resistor (0603) 6.2 kW Chip Resistor (0603) 15 W Chip Resistor (0603) 0 W Chip Resistor (0603) Input Transformer, Mot/77PC016E068 Output Transformer, Mot/77PC016E061 FR4, 62 mil, r = 4.81 Description (12 V Application) 220 pF Chip Capacitors (0603) 0.01 mF Chip Capacitors (0603) 1.8 pF Chip Capacitors (0603) 5.6 pF Chip Capacitor (0603) 5.1 V Zener Diode, On/MM3Z5V1T1 27 V Zener Diode, On/MM3Z27VT1 Transient Voltage Suppressor, On/1.5k27A/1.5SMC27AT3 22 nH Chip Inductors (0603) Dual Transistors Package, On/MBT3904DW1T1 820 W, 1/4 W Chip Resistor (1206) 560 W Chip Resistor (0603) 40 W Chip Resistor (0603) 150 W Chip Resistors (0603) 100 W Chip Resistors (0603) 120 W Chip Resistor (0603) 1.5 kW Chip Resistor (0603) 4.8 W, 1 W Chip Resistor (2512) 470 W Chip Resistors (0603) 18 W Chip Resistors (0603) 910 W Chip Resistors (0603) 2.7 kW Chip Resistor (0603) 6.2 kW Chip Resistor (0603) 15 W Chip Resistor (0603) 0 W Chip Resistor (0603) Input Transformer, 77PC016E068 Output Transformer, 77PC016E061 FR4, 62 mil, r = 4.81 MMG1001NT1 3-4 Freescale Semiconductor RF Linear Amplifiers Device Data MMG1001R2 Rev 0 R5 R7 Q1 Q2 R6 R16 R19 R9 R11 C3 C5 T1 R18 C6 C4 R10 R12 C12 C8 R14 R17 C10 R3 R2 R4 D1 D3 R1 C7 R13 L1 C9 R15 L2 T2 R8 C2 C1 D2 C11 GND Not Active VCC Note: 24 V Application, VCC = 24 V 12 V Application, VCC = 12 V Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MMG1001NT1 50 - 870 MHz Test Circuit Component Layout MMG1001NT1 Freescale Semiconductor RF Linear Amplifiers Device Data 3-5 TYPICAL CHARACTERISTICS FOR 24 V APPLICATION -60 CTB, COMPOSITE TRIPLE BEAT (dBc) 48 dBmV 46 dBmV -65 50 dBmV -70 44 dBmV 42 dBmV -75 0 79-Channel Loading, Flat 200 400 600 f, FREQUENCY (MHz) Figure 5. Composite Triple Beat versus Frequency -65 CSO, COMPOSITE SECOND ORDER (dBc) 48 dBmV 50 dBmV -70 46 dBmV -75 42 dBmV -80 44 dBmV 79-Channel Loading, Flat 0 200 400 600 -85 f, FREQUENCY (MHz) Figure 6. Composite Second Order versus Frequency XMD, CROSS MODULATION DISTORTION (dBc) -55 48 dBmV 50 dBmV -60 46 dBmV -65 44 dBmV -70 42 dBmV -75 0 79-Channel Loading, Flat 200 400 600 f, FREQUENCY (MHz) Figure 7. Cross Modulation Distortion versus Frequency MMG1001NT1 3-6 Freescale Semiconductor RF Linear Amplifiers Device Data PACKAGE DIMENSIONS h X 45 _ A E2 1 14 x e 16 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --- 0.600 0_ 7_ 0.200 0.200 0.100 D e/2 D1 8 9 E1 8X B BOTTOM VIEW E CB S bbb Y A A2 M b1 c DATUM PLANE SEATING PLANE H C L1 ccc C q W W L 1.000 0.039 DETAIL Y A1 GAUGE PLANE CASE 978 - 03 ISSUE C PFP- 16 Freescale Semiconductor RF Linear Amplifiers Device Data EEE CCC EEE CCC b aaa M c1 CA S SECT W - W MMG1001NT1 3-7 REVISION HISTORY The following table summarizes revisions to this document. Revision 7 Date Oct. 2006 * Description Replaced "N suffix indicates 260C reflow capable" bullet with RoHS Compliant, p. 1 MMG1001NT1 3-8 Freescale Semiconductor RF Linear Amplifiers Device Data How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp. MMG1001NT1 Document Number: MMG1001NT1 Freescale Semiconductor Rev. 7, 10/2006 RF Linear Amplifiers Device Data 3-9 |
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